Description: Capacitance–voltage profiling (or C–V profiling, sometimes CV profiling) is a technique for characterizing semiconductor materials and devices. The applied voltage is varied, and the capacitance is measured and plotted as a function of voltage. The technique uses a metal–semiconductor junction (Schottky barrier) or a p–n junction or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or traps.

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